Messages

1

General Questions and Answers / How to obtain demo license?

« on: September 25, 2017, 04:37 »

Dear friends:
                I first time install ATK in Linux system, I want to obtain demo license, but failed.  It show "Incompletely or empty demo license obtained". What mean？How can I obtain license successfully? Thank you  !

2

General Questions and Answers / Electrostatic difference potential vs coordinate of c direction

« on: August 27, 2017, 05:16 »

Dear ATK experts:
                   In ATK manual, I have seen the corresponding reletionship between Electrostatic difference potential with coordinate of c direction, like the enclosed picture. So, it is not include the left and right electode?

3

General Questions and Answers / Two question about InAS p-i-n junction metal gate workfunction

« on: July 12, 2017, 15:30 »

Hi ATK experts!
          In the picture which from ATK manual, we can see the metal gate workfunction is 5.7.When the bias=0.42V, the metal gate workfunction is shift down to 5.28. So i have two questions . First, in the manual , do not clearly declare the material of the metal gate , so why the workfunction is 5.7  ? and how to realise this goal in ATK ?  Second, in the p-i-n junction, we can know that workfunction of p doped is   5.98, Why no doped i workfunction is decide by metal gate? Thank you !

4

General Questions and Answers / Re: Can Work funtion difference between right and left reflect in EDP?

« on: July 7, 2017, 02:53 »

Thanks, my ATK version is 2016.

5

General Questions and Answers / Re: Can Work funtion difference between right and left reflect in EDP?

« on: July 6, 2017, 09:25 »

Thank you! My Y-axis is  δVE(r) but others are  δVH(r). What's wrong with my calculation or related to my calculation setup?

6

General Questions and Answers / Re: Can Work funtion difference between right and left reflect in EDP?

« on: July 6, 2017, 03:46 »

Thank you for your careful reply. What's the difference between average and through point?

7

General Questions and Answers / Re: Can Work funtion difference between right and left reflect in EDP?

« on: July 5, 2017, 14:47 »

sorry, the total log film is too large to post.

8

General Questions and Answers / Re: Can Work funtion difference between right and left reflect in EDP?

« on: July 5, 2017, 11:17 »

Thank you ! The model and log are enclosed in attachment.

9

General Questions and Answers / Can Work funtion difference between right and left reflect in EDP?

« on: July 5, 2017, 10:16 »

Dear ATK experts,
              I have calculated the EDP(enclosed in attachment). Right and left electrode is 0V,but materials is not in accordence. The work function difference of two electrode materials is 1.1eV. Is my result right?   

10

General Questions and Answers / Re: I add the gate below the graphene device the fermi level is not changed,WHY?

« on: April 26, 2017, 05:25 »

In the 'Graphene nanoribbon device: Electric properties'  tutorial (http://docs.quantumwise.com/tutorials/graphene_nanoribbon_device/graphene_nanoribbon_device.html),  the metallic gate of GFET can be used to tune the band edge positions relative to the Fermi level, and thereby control the electric properties of the device.

My purpose is to tune Fermi level of graphene in the bandstructure by appling voltage, I hope that the tune of Fermi level may be realized in bulk configuration. I am confused about it

11

General Questions and Answers / Re: I add the gate below the graphene device the fermi level is not changed,WHY?

« on: April 25, 2017, 03:54 »

I mean that the shift of Fermi level of  the electrodes relative to the valence band edge of the central region should be realized by appling gate voltage in the central region. Is there something wrong with my understanding?

Thank you!

12

General Questions and Answers / Re: I add the gate below the graphene device the fermi level is not changed,WHY?

« on: April 24, 2017, 11:28 »

Thank you! But the transmission spectrum is not shifted in the energy direction. What problem in the calculation setup?The scripts and transmission spectrum(gate=0v,1v,10v) are enclosed. 

13

General Questions and Answers / Re: I add the gate below the graphene device the fermi level is not changed,WHY?

« on: April 24, 2017, 04:07 »

When I apply an overall gate to the whole structure, what I do is to move the potential landscape by a constant amount.
But I want the shift of Fermi level of  the electrodes relative to the valence band edge of the central region. What should I do? changing gate region?

Thank you!

14

General Questions and Answers / Re: Why does carrier density in GFET and GFET(reduced the gate) is the same?

« on: April 23, 2017, 11:35 »

Thank you for your reply! I understand what you mean.

15

General Questions and Answers / Re: I add the gate below the graphene device the fermi level is not changed,WHY?

« on: April 23, 2017, 11:29 »

The shift of the valence band edge of the central region towards the electrode Fermi levels  is due to the applied gate potential  in the tutorial (http://docs.quantumwise.com/tutorials/graphene_nanoribbon_device/graphene_nanoribbon_device.html)

I want to know why the shift of fermi level relative to the band edges can not be realized in my calculation. Are there  some differences between my calculation and tutorial?

Thank you!