QuantumATK Forum
QuantumATK => General Questions and Answers => Topic started by: Tom Jiao on April 26, 2021, 17:56
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Hi, I am a new user to QuantumATK. After following the IVStudyobject tutorial with the junctionless SOI structure, I changed the doping level to simulate the iv characterstics for a nmos structure. https://docs.quantumatk.com/tutorials/ivcharacteristics/ivcharacteristics.html (https://docs.quantumatk.com/tutorials/ivcharacteristics/ivcharacteristics.html)
The resulten curve is attached and the subthreshold slope is a lot worse than the junctionless structure in the tutorial. I was expecting a better SS or at least similar levels. My question is that is my setup correct? Is the central region and the electrode long enough for this doping level?
Thanks.
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It would instructive to see Hartree Difference Potential / PLDOS for the device calculated using the tutorial vs. new doping level adopted in your calculation.
Note that for low-dimensional systems such as films and nanowires one should use charge per atom units when setting doping level, meaning that one should recalculated e/cm**3 for bulk system to e/atom for low dimensional. The doping assumed in your calculation seems to be significantly larger than that adopted in the tutorial.