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General Questions and Answers / Re: some theory backgroud of photocurrent about the indirect gap semiconductor
« on: February 11, 2019, 09:02 »
Hello,
Inelastic transition can be also considered by means of the special thermal displacement method, which we have used to calculate the photocurrent in a silicon p-n junction, see:
https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.10.014026
Best,
Daniele
Inelastic transition can be also considered by means of the special thermal displacement method, which we have used to calculate the photocurrent in a silicon p-n junction, see:
https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.10.014026
Best,
Daniele