I am simulating a simple MTJ with electrode biasing as free layer is generally is kept on higher voltage and fixed layer to ground(0V). In case of 1V biasing using Semi Empirical (EHT) approach the value of TMR comes of the order of 10^14, I want to ask that is the calculated value is correct or there is a mistake in structure optimization or TMR calculation. However I calculated this TMR by keeping electron temperature 1200K.
Next I want to ask that can optimize MTJ structure at different electron temperature and TMR calculation at different temp. eg. optimization at 1200k and parallel and anti-parallel calculations at 300K(room temp).
Hoping your help.
Thanks
