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General Questions and Answers / Is there a fundamental physical limit for the On/Off ratio of a transistor?
« on: May 3, 2019, 17:57 »
Dear QuantumATK experts,
I would like to know if there exists a physical limit for the transistor On/Off ratio in terms of the channel material energy band gap.
For example, Si has a band gap of 1.14 eV and it may have some kind of limits on the maximum On/Off ratio in the form of exp(Eg/KT)?
I am not sure about this relation exists or not because I don't have a strong background in physics, but I would like to justify my result from the calculation.
Thanks!
I would like to know if there exists a physical limit for the transistor On/Off ratio in terms of the channel material energy band gap.
For example, Si has a band gap of 1.14 eV and it may have some kind of limits on the maximum On/Off ratio in the form of exp(Eg/KT)?
I am not sure about this relation exists or not because I don't have a strong background in physics, but I would like to justify my result from the calculation.
Thanks!