QuantumATK Forum

QuantumATK => General Questions and Answers => Topic started by: aaskar on May 13, 2020, 01:46

Title: Is it possible to simulate MoS2 FET (2um channel length) in ATK?
Post by: aaskar on May 13, 2020, 01:46

Hello,

I am quite new to ATK.

I am wondering if I have a FET device (2um channel length, and 10 um channel width) made of a few layers (10 nm) MoS2 thick exfoliated layer, contacted at source and drain with gold contact, and the gate is applied through a global gate through the substrate (standard 300 nm SiO2/highly doped Si). Is such a device something I can simulate in ATK? I am mainly interested in the electrical output of the device, Ids Vs. Vds, and so on.

Please if there are examples, I would appreciate sharing them with me.

Thanks,

Title: Re: Is it possible to simulate MoS2 FET (2um channel length) in ATK?
Post by: mlee on May 13, 2020, 08:05

You will be interested in the  QuantumATK section of  https://www.synopsys.com/content/dam/synopsys/silicon/newsletters/tcad-news-dec2019-nl.pdf.