QuantumATK Forum

QuantumATK => General Questions and Answers => Topic started by: 395235863 on December 12, 2015, 09:20

Title: How to simulate FET's metal-semiconductor contact's Schottky barrier
Post by: 395235863 on December 12, 2015, 09:20

Dear QuantumWise Staff :
  1.How to use a doping concentration range in device's electrode to simulate the experimental FET metal-semiconductor Schottky barrier ?How to choose the value of doping concentration?
  2.When i calculate device's Vgate-current curve, how do the dielectric thickness affect the current?Generally,in device simulation,should dielectric thickness be bigger than a critical value?
 
Thank you in advance.

Title: Re: How to simulate FET's metal-semiconductor contact's Schottky barrier
Post by: Umberto Martinez on December 14, 2015, 10:48

For both questions the answer is to test your set up according to your assumptions.
Here is a relevant tutorial: http://quantumwise.com/documents/tutorials/latest/InAsDevice/index.html/

Title: Re: How to simulate FET's metal-semiconductor contact's Schottky barrier
Post by: 395235863 on December 14, 2015, 14:30

I have read the tutorial in detail before I post the question.

Quote from: 395235863 on December 12, 2015, 09:20

  2.When i calculate device's Vgate-current curve, how do the dielectric thickness affect the current?Generally,in device simulation,should dielectric thickness be bigger than a critical value?

The second question I can test my set up.But how to deal with the first question?When i choose different value of doping concentration,what should i calculate to compare with metal-semiconductor?For example,can i get p-i junction's barrier as well as Schottky barrier?Like the attached png,what region's gap is the same to contact's barrier?

Title: Re: How to simulate FET's metal-semiconductor contact's Schottky barrier
Post by: 395235863 on December 21, 2015, 03:05

need your help Thank you!

Title: Re: How to simulate FET's metal-semiconductor contact's Schottky barrier
Post by: Jess Wellendorff on December 21, 2015, 10:45

I don't understand this question. Are you in doubt about the value of a suitable doping concentration, or is the question about how to use a specific doping in ATK?

Title: Re: How to simulate FET's metal-semiconductor contact's Schottky barrier
Post by: 395235863 on December 21, 2015, 11:16

Quote from: Jess Wellendorff on December 21, 2015, 10:45

I don't understand this question. Are you in doubt about the value of a suitable doping concentration, or is the question about how to use a specific doping in ATK?

I want to know how to choose  a suitable doping concentration.

Title: Re: How to simulate FET's metal-semiconductor contact's Schottky barrier
Post by: Jess Wellendorff on December 22, 2015, 08:14

If you want to compare theoretical results to experimental results for some specific FET I guess you need to consult the literature to figure out what the expected doping level is. There really is no general answer to such question.

Title: Re: How to simulate FET's metal-semiconductor contact's Schottky barrier
Post by: ams_nanolab on December 29, 2015, 07:13

You might find this link useful http://arxiv.org/pdf/1512.03534v2.pdf