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QuantumATK => General Questions and Answers => Topic started by: sitangshu on July 11, 2013, 09:51

Title: valance band parameter for silicon nanowire
Post by: sitangshu on July 11, 2013, 09:51

Hi,

Can anyone tell me what could be the value of the parameters L, M and N (used in Luttinger parameters of valance band dispersion relation of bulk silicon) for describing the valance band dispersion relation for silicon nanowire.

The values for the bulk case are -6.53, -4.64 and -8.75 respectively in the units of hc^2/(2m0), where hc is the Planck's constant divided by 2*pi and m0 is the electron rest mass.

Thanks in advance.
Sitangshu

Title: Re: valance band parameter for silicon nanowire
Post by: zh on July 16, 2013, 02:18

Please check the following literature:
Aniello Esposito, Band Structure Effects and Quantum Transport. 2011. X, 194 pages. ISBN 3-86628-378-4 and 978-3-86628-378-7

It may be accessed at http://www.iis.ee.ethz.ch/~schenk/theses/esposito.pdf

Title: Re: valance band parameter for silicon nanowire
Post by: Anders Blom on July 17, 2013, 00:11

For a 1D system you wouldn't use those parameters since the dispersion only depends on kz, so each band can be reduced to an effective mass term (the parabolic part of the dispersion) and higher order (non-parabolicity) which can have different shapes, but probably not similar to the bulk models.