QuantumATK Forum
QuantumATK => General Questions and Answers => Topic started by: techenthusiast on April 1, 2025, 07:51
-
Dear Experts,
Good morning, hope you are doing well. I have gone through these articles. Here they have mentioned Source Exhaustion Effects. I am enclosing my device structure so that can be comparable with the provided device structure at the literature. Especially for single channel device. is it correct , the device structure?
https://sci-hub.st/10.1109/iedm.2009.5424281
https://ece.uwaterloo.ca/~l28wei/publications/2011TED_CNT.pdf
-
Dear Experts,
Is there any effects, in such cases for different VDS studies?
For example for the same device VDS=0.1,1.0,0.8?
How should it behave as IV Analyzer?
Why 0.05V VDS is not working for GAA CNT FET -- Does not provide suitable ID -VGS
-
Is it possible in a conventional case? For lower VDS up to =0.15V (along with VDS=0.15,0.3,0.4,0.5,0.8,1V) is giving somewhat acceptable results whereas VDS=0.05V (for the same device) doesn't provide suitable results. Maybe because of the convergence problem during execution. Kindly share yours's viewpoints.
-
Is it possible in a conventional case? For lower VDS up to =0.15V (along with VDS=0.15,0.3,0.4,0.5,0.8,1V) is giving somewhat acceptable results whereas VDS=0.05V (for the same device) doesn't provide suitable results. Maybe because of the convergence problem during execution. Kindly share yours's viewpoints.
Any kind of response would be highly appreciated