QuantumATK Forum
QuantumATK => General Questions and Answers => Topic started by: techenthusiast on April 25, 2025, 08:50
-
Dear experts
Good morning, this kind of device structure is possible or scientifically feasible for Quantum Atk? if yes then its fine, if not then please advise. Thank you.
-
But but it's not necessary to simulate all 3 tubes together, a single one will be enough. One might use 3 in a real device for increase current density, but they operate individually.
-
Hello, I would like to ask, RIDS current unit is uA / um, need to use the current value divided by the width of the A direction. The current obtained in the calculation of the ring gate nanotubes needs to become uA / um. Is it divided by the width of the A direction ? If not, which length should be divided by ?
-
But but it's not necessary to simulate all 3 tubes together, a single one will be enough. One might use 3 in a real device for increase current density, but they operate individually.
So, this kind of device structure is more over feasible to operate in Quantum Atk? Like I refer previously. And according to you it will provide more current densities for ID VG. But what about the spatial region? Is it can be opted for a single spatial region for all 3 CNTS shown here? Could you please help me in this regard? by sharing a sample .py file where 3 NTs with a single spatial region throughout the device including dielectric. So that I can learn from that. Thank You.