QuantumATK Forum
QuantumATK => General Questions and Answers => Topic started by: Dipankar Saha on November 8, 2013, 15:08
-
WARNING
# The computed multigrid residual is greater than the required accuracy.
# Computed residual : 1.20533e-11
# Required accuracy : 1.00000e-12
............ What does this warning message signify???
-
This error is related to the accuracy of the multigrid solver. 1e-11 is still a very small number, thus, I think it is safe to continue. However, please send your inputfile to [email protected], with an explanation, such that we can check the problem.
-
Okay... I'm continuing with it.... / Besides, I will mail the *.py file with due explanations....to [email protected]
Thanks :)
-
The computed multigrid residual is greater than the required accuracy.
# Computed residual : 1.20533e33
# Required accuracy : 1.00000e-12
I have used multigrid with periodic boundary contions in A and B directions in my structure that is gated .
what could be the reason for such huge difference.??
-
Please tell us how we are supposed to help you when we have zero idea of what calculation you are performing, what input parameters are used, etc?
-
sorry ,i forgot to mention the calculation and input parameters.
I am using DFT calculation,with poisson solver setting as multigrid.I have given boundary conditions as periodic in A and B directions.My structure is p-i-n gated transistor. For doping i have replaced some Si atoms with boron atoms for p-type doping and with phosphorous atoms for n -type.
i am getting this warning repeatedly
The computed multigrid residual is greater than the required accuracy.
# Computed residual : 1.20533e33
# Required accuracy : 1.00000e-12
why am i getting such huge difference??
-
Attach the whole script, otherwise we can't reproduce it.
-
i am atttaching my script here.
please help as to why i am getting huge difference in required and obtained values
-
Your gate is outside the simulation cell and therefore not included in the calculation. Moreover it looks like you attempt to have periodic boundary conditions in the Y direction while at the same time having a gate there, this will not work. If you are using gates, you need Dirichlet on the gate (cf. http://quantumwise.com/forum/index.php?topic=1597.0).
Also, you will need to passivate all the Si surface atoms to eliminate dangling bonds (this is not related to the multigrid residual though).