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QuantumATK => General Questions and Answers => Topic started by: MaryamNazirfakhr on September 16, 2014, 21:14

Title: GAA SiNW FET
Post by: MaryamNazirfakhr on September 16, 2014, 21:14

Hi

I'm trying to simulate a SiNWFET by ATK 2013.
The NW is rectangular (W=2). When I creat the gate and dielectric, the NW does not locate at the center of the gate (as you see in http://8pic.ir/images/0htkkavckknuh94oy5gk.png ).
How can I move the NW to the centeral point of the gate? Another question is that how can I creat the Source and Drain regions?

Thanks

Title: Re: GAA SiNW FET
Post by: Umberto Martinez on September 17, 2014, 09:58

Better you center the gate from the Spatial region tool where you can define the geometry of the gate. In particular, start and end x,y points.
check  http://quantumwise.com/documents/tutorials/latest/NanowireDevice/index.html/chap.nanowiredevice.html

Title: Re: GAA SiNW FET
Post by: MaryamNazirfakhr on September 18, 2014, 12:19

hi

I'm trying to simulate a SiNWFET and i need to dope source/drain regions.  Could you possibly tell me that how can I define dopping in source/drain regions? for example: donor doping / 1*10^20 cm^-3. the problem is that i do not know how to calculate the number which i have to add in editor code.

in one of the tutorials of quantumwise.com , it was mentioned that:
[http://www.quantumwise.com/documents/tutorials/latest/NanowireDevice/index.html/chap.nanowiredevice.html ]

"The electrode is about 1 nm long and has a cross section of (0.5 nm)x(0.5 nm), so the added charge (charge=0.01) corresponds to an effective doping level of around 4*10^19 cm^-3".

what is the relation between 0.01 and 4*10^19 cm^-3? any formula? for 1*10^20 cm^-3, how can i compute the number? the primitive vectors of the electrodes in my device are the same and as follow:
A  31.746      0        0
B    0       31.746     0
C    0         0      6.257

(ALL IN ANGESTROM)

thanks