QuantumATK Forum

QuantumATK => General Questions and Answers => Topic started by: ams_nanolab on October 31, 2015, 17:23

Title: NDR related problem in device calculations
Post by: ams_nanolab on October 31, 2015, 17:23

In device calculations in ATK, usually scattering free transport is considered, and for devices it often gives NDR behavior.

However, the inclusion of phonons restores the conventional shape of the IV-curves (Mathieu Luisier talk at IEDM 2014 talk on MoS2 FET: 10.1109/IEDM.2014.7047142).

His work was based on eTB with multiple neighbours, the hamiltonian being constructed by Max.localizedWannier functions. This seems a promising approach, with great accuracy and flexibility too.

Can something similar not be implemented in ATK???

Title: Re: NDR related problem in device calculations
Post by: Anders Blom on November 1, 2015, 21:51

Our approach is a lot better.
http://quantumwise.com/publications/tutorials/item/837-inelastic-transmission