QuantumATK Forum

QuantumATK => General Questions and Answers => Topic started by: rana on March 12, 2016, 15:25

Title: NEGF simulatrion
Post by: rana on March 12, 2016, 15:25

1) NEGF simulation is carried out in REAL space or Decoupled mode space?
2) Can we use ATK to simulate FETS with different cross sections.?
3) Can we define gate electrode  with more than one material(2 material in one gate electrode)?
4) Can we investigate current with non-coherent transport including scattering with optical and acoustic phonons in FETs?

Title: Re: NEGF simulatrion
Post by: Jess Wellendorff on March 14, 2016, 09:27

2) Yes, you can choose any device structure you like.
3) Yes, there is in principle no limits to the number of gate materials.
4) Yes, you can include the electron-phonon coupling: http://docs.quantumwise.com/tutorials/mobility.html (http://docs.quantumwise.com/tutorials/mobility.html)

Title: Re: NEGF simulatrion
Post by: rana on March 14, 2016, 09:49

thank you sir