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QuantumATK => General Questions and Answers => Topic started by: harkishan_dua on July 22, 2020, 13:02

Title: Query Regarding photocurrent in Silicon p-n junction
Post by: harkishan_dua on July 22, 2020, 13:02

I am trying to reproduce the photocurrent calculation from tutorial as given on the Quantum ATK website,
https://docs.quantumatk.com/tutorials/photocurrent/photocurrent.html
and in that turorial, while doping the silicon device, it is asked to have the doping of both p and n types in the left electrode only. And i am not able to understand why both the n type and p type dopings are said to be done in the left electrode. So clarify my doubt. attached with this post is a screenshot from the tutorial where the dopings are  done.

Title: Re: Query Regarding photocurrent in Silicon p-n junction
Post by: Tue Gunst on August 3, 2020, 11:20

Yes, the picture is somewhat misleading.
The doping is applied to the left and right electrode respectively as written in the tutorial text.
Please also refer to the script silicon_pn_junction.py attached on the tutorial.
There doping is clearly applied to the left and right electrode regions.