QuantumATK Forum

QuantumATK => General Questions and Answers => Topic started by: Roc on April 13, 2016, 07:21

Title: How to answer the comment
Post by: Roc on April 13, 2016, 07:21

Dear all,
      I give the DOSs of the central sample under a biase. A reviewer asks the question:  I don't know how to define here's DOS and calculate it because the two-probe system lies in a nonequilibrium state under a finite bias, making the chemical potential deferent on the different positions of the central sample from the L to R electrode. The authors should also explain it.
How to answer the question? Thanks.

Title: Re: How to answer the comment
Post by: Jess Wellendorff on April 13, 2016, 11:23

Did you do a Device Density of States for the full device under bias, or an ordinary DOS for the central region only? If the latter, I think the reviewer may have a good case.

The DDOS method is documented here: http://www.quantumwise.com/documents/manuals/latest/ReferenceManual/index.html/ref.devicedensityofstates.html (http://www.quantumwise.com/documents/manuals/latest/ReferenceManual/index.html/ref.devicedensityofstates.html)
See attached also PNG, where the left and right electrode Fermi levels indicate that the device is biased.

Title: Re: How to answer the comment
Post by: Roc on April 14, 2016, 13:19

Thank you. It is the Device Density of States for the full device under bias.

Title: Re: How to answer the comment
Post by: Jess Wellendorff on April 15, 2016, 08:37

OK, if you used the DDOS in the paper, and if the left and right Fermi levels are clearly indicated in the paper, I think you should simply explain to the editor how the DDOS is computed from the spectral density matrix, see the notes in http://www.quantumwise.com/documents/manuals/latest/ReferenceManual/index.html/ref.devicedensityofstates.html (http://www.quantumwise.com/documents/manuals/latest/ReferenceManual/index.html/ref.devicedensityofstates.html).