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Messages - rana

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I am trying to simulate a GNR-SiNR hetero junction. Both the materials have different band gaps and electron affinity. So how can we define the  valence band or conduction band discontinuity at the interface of GNR-SiNR junction. Also I would like to know if the band gaps are taken care by the ATK code itself and there is no need to define the band gaps manually for each of GNR and SiNR.

2
I am trying to simulate the Graphene nanoribon (GNR)/ silicnen nanoribbon (SiNR) heterojunction. I am stuck in the simulation. I want to know how to define the work function of the two material for the GNR/SiNR heterojunction.

3
General Questions and Answers / High Drain Bias
« on: March 14, 2016, 09:53 »
Sir how is the simulation for high drain bias is carried out in ATK? Is it based on Montecarlo simulations??

4
General Questions and Answers / Re: NEGF simulatrion
« on: March 14, 2016, 09:49 »
thank you sir

5
can we find the effect of interface roughness scattering on mobility in Si nanowire?

6
General Questions and Answers / NEGF simulatrion
« on: March 12, 2016, 15:25 »
1) NEGF simulation is carried out in REAL space or Decoupled mode space?
2) Can we use ATK to simulate FETS with different cross sections.?
3) Can we define gate electrode  with more than one material(2 material in one gate electrode)?
4) Can we investigate current with non-coherent transport including scattering with optical and acoustic phonons in FETs?

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General Questions and Answers / gate leackage current
« on: March 12, 2016, 08:57 »
Can we calculate gate leakage current in ATK because in the introduction of manual its mentioned that gate electrodes are included as non current carrying electro-static gates and can we use ATK to simulate multi-probe systems.

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