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General Questions and Answers / Thickness of metal gate and dielectric
« on: June 19, 2020, 11:00 »
Hello
I want to simulate the graphyne nanoribbon transistor based on this papers (https://doi.org/10.1016/j.orgel.2017.12.039 , https://doi.org/10.1039/C6RA27101D). My question involved in the value and method of the thickness of metal gate and dielectric.
On what basis were these parameters selected?
Is there any relationship between length and width of the central region with the width and the thickness of metal gate and dielectric?
I want to simulate the graphyne nanoribbon transistor based on this papers (https://doi.org/10.1016/j.orgel.2017.12.039 , https://doi.org/10.1039/C6RA27101D). My question involved in the value and method of the thickness of metal gate and dielectric.
On what basis were these parameters selected?
Is there any relationship between length and width of the central region with the width and the thickness of metal gate and dielectric?