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Topics - zwh

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Dear Expert,

I would like to ask for your guidance on gate voltage settings in device simulations:

1. In single-gate devices, symmetric materials show nearly identical current whether the gate is on top or bottom. However, Janus materials show large differences depending on gate position. What causes this asymmetry?

2. For dual-gate devices with symmetric top and bottom gates, how are gate voltages set in the IV Characteristics module? When sweeping from 0 V to 1 V over 11 points, does 1 V mean both gates are biased at 1 V? If so, won’t the opposing electric fields cancel each other, reducing net field strength and weakening channel control?

Your insights would be greatly appreciated.

2
Dear Expert,

I would like to ask for your guidance on gate voltage settings in device simulations:

1. In single-gate devices, symmetric materials show nearly identical current whether the gate is on top or bottom. However, Janus materials show large differences depending on gate position. What causes this asymmetry?

2. For dual-gate devices with symmetric top and bottom gates, how are gate voltages set in the IV Characteristics module? When sweeping from 0 V to 1 V over 11 points, does 1 V mean both gates are biased at 1 V? If so, won’t the opposing electric fields cancel each other, reducing net field strength and weakening channel control?

Your insights would be greatly appreciated.

3
Hi everyone, I hope you can help me resolve this issue.
When using the "optimizedeviceconfiguration" module for device optimization, the optimized device model is missing from the HDF5 file. I'm not sure what the problem is—could it be that I missed something during the setup?
Please help me take a look. Thank you for your help!

4
Hello, I encountered an inconsistency when using QuantumATK with the same device model. The data calculated using the IVCharacteristics script shows significant discrepancies compared to results obtained by individually setting each gate voltage with the same basis set. Attached are my IVC script, the loop script for separate gate voltage configurations, and the computational result graphs. Could you please help me identify what might be causing this issue? Thank you.
Additionally, my alternative approach involves first using the test script to calculate the SCF (self-consistent field) of the device, then employing the TE script (Transmission Eigenchannel) to extract the current information of the device.

Pages: [1]