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Topics - techenthusiast

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1
Dear experts,

Good evening, How to compute contact Resistance (Analysis) of the underlap of CNTFET Using Quantum Atk . Kindly provide some guidelines associated with it, if feasible. Thank You.

Regards

2
Dear experts,

Good morning, hope you are doing well. Which one would be the better placement option of Target Molecules for a FET?

1.For example, as per van der wal force between Target molecules and Graphene FET. Molecule should be placed just above the channel region.

2.Another option is to place the molecule in the channel based on covalent bond between graphene molecule and that target molecules.


Please advise. Thank you.

3
Dear experts,

Good evening, Hope you are doing well. Just to ask : How to check Estimated completion time for the simulation ?
Thank you.


4
Dear experts,

Good morning , Hope you are doing well. How to extract celllines or protien as a biomarker for FET based Sensor?
https://pubchem.ncbi.nlm.nih.gov/cell/CVCL_0031

Pubchem CID was there for only molecules.

Thank You.

5
Dear experts,

Good morning, what is the meaning of: Truncated content during task execution of IV?


Thank you

6
Good morning ,Hope you are doing well. This email is to ask a query regarding the usage of  quantum atk software ,offline. Actually in hilly areas, the weather is very unpredictable. Mostly rainy throughout the year. That's why there is a chance of getting a power cut (Though we are having UPS) and network fluctuations (Major Network issues) very frequently. Currently we are using a licensed workstation by fetching the actual server. So, it must require a stable network(bridge between actual server and licensed PC for efficient task execution(NEGF Converged calculation), Which is practically obvious.

Main concern with respect to circumstances:  To use the software offline(Licensed PC Workstation)  to avoid network fluctuations and other stuff.

Kindly advise further, regarding the issues. Thank you.

7
Dear experts

Good morning, this kind of device structure is possible or scientifically feasible for Quantum Atk? if yes then its fine, if not then please advise. Thank you. 

8
Dear sir,

Good morning, how to shift Dirac point of ambipolar chr. of ID VG for CNT. I wanted to shift it towards the negative x axis. 
Actually, for the case, Working on 10nm cylindrical GAA CNT FET. Metal gate voltage =1.0V
Lanthanum oxide as a dielectric of 1.5nm
S/D=4nm
PIN Doping profile OR NIN Doping profile
Coming -Ambipolar behaviour

Wanted to optimize to perform better in terms of electrical parameters.


Also, how to make multiple Channels with 4X CNT for cylindrical GAA CNT FET

9
Dear Experts,

Good morning, hope you are doing well. How to coat CNT Surface using external molecules (Extracted from Pubchem CID) - https://pubchem.ncbi.nlm.nih.gov/compound/Poly-L-lysine-_hydrochloride

Ref. - https://pubs.acs.org/doi/10.1021/acs.analchem.1c03786

Kindly share some tutorial and guidelines. Thank You.

Regards


10
General Questions and Answers / Source Exhaustion Effects
« on: April 1, 2025, 07:51 »
Dear Experts,

Good morning, hope you are doing well. I have gone through these articles. Here they have mentioned Source Exhaustion Effects. I am enclosing my device structure so that can be comparable with the provided device structure at the literature. Especially for single channel device.  is it correct , the device structure?

https://sci-hub.st/10.1109/iedm.2009.5424281

https://ece.uwaterloo.ca/~l28wei/publications/2011TED_CNT.pdf


11
Dear experts,

Good morning, just to ask, normally: For this kind of structure (Long devices), The cell size is required to increase for better convergence while proper task execution? in conventional cases? if yes, how to do that for existing device structure/geometry. Thank you.
Note: I have enclosed the structure.

12
Dear experts,

 What is the efficient workflow structure for IV analyzers for cylindrical GAA structure.

For example -Poisson solver :Multi grid?
Boundary conditions for top/buttom ,front/ back: ,left/right :

Device semi empirical calculator. ?

Thank you.

13
Dear experts,

Good morning, I have attached my script for a  GAA device structure ।

Just for your kind information -I have used a poison solver: Conjugate gradient

Top and button -Neuman boundary conditions
Front and back -periodic
Side by side(Left and Right)  -Dirichlet

Slater koster model ।

I have doped using -The miscellaneous section -Doping just above the spatial region of the current version of the software।
It does not provide suitable IV Analyzer Results such as -https://www.sciencedirect.com/science/article/abs/pii/S143484112030892X

Thank you once again।

14
Dear Experts,

Good afternoon, I have one question regarding how to coat Zigzag CNT with gold or silver nanoparticles.  Also how to make a CNT-based junction or channel to form a Source and drain as a gold electrode with proper channel length maintained?

Just to ask: Is this example (https://docs.quantumatk.com/tutorials/molecular_device/molecular_device.html) aligned with my second question?

Any kind of valuable suggestions would be highly appreciated.



15
Dear experts,
Good evening, How to shift the Ambipolar characteristics of a GAA CNFET for ID-VG[Towards Negative x-axis]?
U or V shape ID -VG characteristics

Even with gradual doping of P-I-N Formation, it's coming
Source: P-type (1E+19/Cubic cm)
Channel: Intrinsic
Drain: N-type (5E+18/Cubic cm)

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