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General Questions and Answers / How to shift the Ambipolar characteristics of a GAA CNFET for ID-VG ?
« on: January 2, 2025, 13:31 »
Dear experts,
Good evening, How to shift the Ambipolar characteristics of a GAA CNFET for ID-VG[Towards Negative x-axis]?
U or V shape ID -VG characteristics
Even with gradual doping of P-I-N Formation, it's coming
Source: P-type (1E+19/Cubic cm)
Channel: Intrinsic
Drain: N-type (5E+18/Cubic cm)
Good evening, How to shift the Ambipolar characteristics of a GAA CNFET for ID-VG[Towards Negative x-axis]?
U or V shape ID -VG characteristics
Even with gradual doping of P-I-N Formation, it's coming
Source: P-type (1E+19/Cubic cm)
Channel: Intrinsic
Drain: N-type (5E+18/Cubic cm)