1

**Questions and Answers / Re: Doping in Device Simulations**

« **on:**May 3, 2021, 12:59 »

It would instructive to see Hartree Difference Potential / PLDOS for the device calculated using the tutorial vs. new doping level adopted in your calculation.

Note that for low-dimensional systems such as films and nanowires one should use charge per atom units when setting doping level, meaning that one should recalculated e/cm**3 for bulk system to e/atom for low dimensional. The doping assumed in your calculation seems to be significantly larger than that adopted in the tutorial.

Note that for low-dimensional systems such as films and nanowires one should use charge per atom units when setting doping level, meaning that one should recalculated e/cm**3 for bulk system to e/atom for low dimensional. The doping assumed in your calculation seems to be significantly larger than that adopted in the tutorial.