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General Questions and Answers / Re: I-V of graphene nanosheet
« on: June 3, 2021, 01:14 »
You would need to design proper electrodes when applying bias voltage, e.g., by doping source and drain, see an example on how to introduce doping in https://docs.quantumatk.com/tutorials/silicon_nanowire/silicon_nanowire.html (Section: Doping the Si(100) wire).
Also, you may consider using IVCharacteristics study object to do device calculations, see https://docs.quantumatk.com/tutorials/ivcharacteristics/ivcharacteristics.html.
Also, you may consider using IVCharacteristics study object to do device calculations, see https://docs.quantumatk.com/tutorials/ivcharacteristics/ivcharacteristics.html.