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Messages - beauyy

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31
Thanks for your reply.  I find that the structure of monolayer silicene can easily to achieve SCF under lower bias,  but the monolayer silicene is still difficult to achieve SCF under 1.6 V when I use the optimized structure under 1.4 V. What can I do for this problem?

32
Can anybody answer this question?

33
Dear sir,
     I have built the bulk of monolayer silicene and optimized it according to http://www.quantumwise.com/publications/tutorials/item/512-opening-a-band-gap-in-silicene-and-bilayer-graphene-with-an-electric-field. But the devices built from the optimized bulk is difficult to SCF. What is wrong with my device structure and the device optimization?
The attached file is the script for device optimization.

34
General Questions and Answers / Scritp for HSE06 in GGA
« on: June 29, 2015, 14:42 »
Dear sir,
    I am using ATK 2014.2 to calculate the bandstructure of 2D materials. In order to get a more accurate result,  I have to use HSE06 in GGA, but there is no option in software. Would you give me any script to define HSE06 ?

35
General Questions and Answers / Re: Optoelectronic device
« on: June 2, 2015, 11:24 »
Thanks for your reply.
     But I want to calculate the current response of electronic device to the illumination with different intensity and wavelength.

36
I am using VNL 2014.2 to show the ldos. The color map I am using is HSV type, the isovalue is set as 0.01. I have attached the LDOS as below. I still don't know what the color mean in LDOS with isosurface type. I can not find the color bar .

37
General Questions and Answers / Optoelectronic device
« on: May 22, 2015, 06:49 »
Dear sir,
      Can ATK be applied to calculate the performance of optoelectronic devices, for example,  photodetectors and photodiode and so on?

38
The calculation part and device part have been included in the .py file attached below. The k-point in calculation is 5*5*100. It is large enough for this calculation. And the size along A direction seems impossible to be reduced. Is there anything wrong in my calculation?

39
Dear sir,
    I have attached the device .py  below. The neuman boundary conditions is applied along B direction.
   Of course, I am willing to make the central region longer, but it is difficult to converge.
   And the bigger vacuum region is also make the device more difficult to converge. 

40
Dear sir,
        I am calculating the gate-drain curves of ZnS devices doped with MoO3 molecule. All the calculation at different gate voltage is SCF converged. But the drain current does not monotonously decrease with the rise of gate voltage. Is there any errors in this calculation?All the currents are calculated from the device configuration at lower gate voltage.

     The .py is listed as following:
#read in the old configuration                                                                                   
device_configuration = nlread("F:/MoO3/gate-ZnS-MoO3-0.8V-b0.4V.nc",object_id='gID000')[0]                       
calculator = device_configuration.calculator()                                                                   
metallic_region0 = device_configuration.metallicRegions()[0]                                                     
                                                                                                                 
# Define gate_voltages                                                                                           
gate_voltage_list=numpy.linspace(0.6,0.6,1)*Volt                                                                 
                                                                                                                 
for gate_voltage in gate_voltage_list:                                                                           
    device_configuration.setMetallicRegions(                                                                     
        [metallic_region0(value = gate_voltage)] )                                                               
                                                                                                                 
    # make a copy of the calculator and attach it to the configuration                                           
    # restart from the previous scf state                                                                         
    device_configuration.setCalculator(calculator(),                                                             
         initial_state=device_configuration)                                                                     
    device_configuration.update()                                                                                 
    nlsave('F:/MoO3/gate-ZnS-MoO3-0.8V-b0.6V.nc', device_configuration)                                           
                                                                                                                 
    #Analysis                                                                                                     
    filename= 'F:/MoO3/gate-ZnS-MoO3-0.8V-b0.6V.nc'                                                               
    transmission_spectrum = TransmissionSpectrum(                                                                 
        configuration=device_configuration,                                                                       
        energies=numpy.linspace(-2,2,101)*eV,                                                                     
        kpoints=MonkhorstPackGrid(5,5),                                                                           
        energy_zero_parameter=AverageFermiLevel,                                                                 
        infinitesimal=1e-06*eV,                                                                                   
        self_energy_calculator=RecursionSelfEnergy(),                                                             
        )                                                                                                         
                                                                                                                 
    nlsave('F:/MoO3/gate-ZnS-MoO3-0.8V-b0.6V.nc', transmission_spectrum,object_id='trans'+str(gate_voltage))     
    nlprint(transmission_spectrum)                                                                               

The device configuration is attached.


                                                                                                                 
                                                                                                                 
                                                                                                                 

       

41
Dear sir,
     Is it possible for ATK 2014.2 to calculate the transport behavior of all kinds of perovskites? Is the crystal lattice of perovskites too large to model a device? If it is possible, how to simulate the different doping degree in  perovskite lattice, for example,  Sr2.46La0.54Fe2O7-d  ?

 

42
Can anybody answer this question?

43
I drew the ldos of some devices. Some of ldos is red, and some is blue. What are the differences between the red and blue colors?

44
Dear sir,
  I am calculating the I-V curves of black phosphorus with F4TCNQ. The transmission calculation is converged under 0 V, however it is different to converge under other bias. What is the problem?
  ATK 11.8.2 cannot calculate the transmission of black phosphorus under bias > 1.0 V, however ATK 14.2 can do it. Is it a bug in ATK 11.8.2? How can solve this problem?
  I have attached the IV calculation .py document.

45
Dear sir,
    I am calculating the electronic properties of P-type materials. I find that ATK software is always used to explain the electron transport behavior. But in P-type material, conductivity is caused by hole transport. Can ATK software be used to explain the hole transport behavior? 

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