I currently studying BC2N nanoribbon with back gate. I need help, i was wondering why the curve does not showing like typical id vds characteristic of mosfet.
Here are the settings I used:
-Lcao calculator
-left & right electrode in lcao calculator : 0V
-Multi-grid solver type, where (A & B) i put Neumann, and C i put Dirichlet.
Below i attached the side and front view of BC2N with back gate structure, and the id vds obtained. I appreciate any help and suggestions.
