Author Topic: Nanoscale MOSFET with ATK  (Read 3296 times)

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Offline gM

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Nanoscale MOSFET with ATK
« on: June 8, 2012, 23:30 »
Hello, and thank you again for taking the time to look at my inquiry. I'd like to understand better, what are the capabilities of ATK to simulate a nanoscale device such as the one attached (very primitive version of a 5nm mosfet).

1.How do I define meaningful electrode regions? Must they be metal? Should the lattice extension of the semiconductor channel extend in the contact region (see attached)? 
2.How exactly are these electrode regions contacted?  Is the cross-section of the contact vertical or horizontal?
3.What is the simulation time of a device in the ~1000 atom range on 4 Quad core machines with 8 GB of ram using MPICH2? Does the simulation time increase linearly with number of atoms, is it NlogN, N^2..etc?
4.Is there a tutorial, script, resource, etc. that goes in detail about how to simulate nanoscale MOSFETs using ATK?

Kind Regards.

Offline Anders Blom

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Re: Nanoscale MOSFET with ATK
« Reply #1 on: June 13, 2012, 13:53 »
Very impressive system - in fact, one of the most advanced ones we have seen :)

Please give me some time to properly address your questions.

Offline gM

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Re: Nanoscale MOSFET with ATK
« Reply #2 on: June 22, 2012, 17:35 »
Any answers on this yet :)?

Offline Anders Blom

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Re: Nanoscale MOSFET with ATK
« Reply #3 on: June 23, 2012, 11:36 »
Sorry for the delay! Point 1 explains it partly.

1. The electrodes had better be conducting, but it is also possible to use doped semiconductors. In ATK 12.2.2 (release expected early next week) it will be possible to assign a charge to an electrode. This shifts the Fermi level just like doping would, but instead of an explicit dopant atom, you get a much more reasonable effective doping concentration.

You can choose to have the channel extend into the electrode or not, it really depends on what you wish to simulate, but note that the electrode is repeated semi-infinitely to either side, so if that is not the physical situation, then you don't want that.

2. It's hard to define vertical or horizontal without a direction of gravity ;) So, in order to speak the same language, we had better be more explicit. The electrode is contacted in the C direction, which should be parallel to Z. The AB plane (and hence the XY plane) must be perpendicular to C.

3. It's really hard to say. The time increases roughly linear with the length in Z but perhaps more like N^2 with the extension in XY. Under any circumstance at 1000 atoms you are looking at a serious simulation. If you only have a single machine, MPI is not going to help much, unfortunately. MPI provides a very good scaling advantage when you run over several machines, however, so if you have 2-5 machines you can get a very nice speed-up (or if there is a cluster available, even better). But don't run MPI on a single machine, it will actually be slower.

4. Not really, but we can help you with details for each step as needed.