Hello, Dear All,
I am thinking about the gate voltage. Now we can add a metallic region or a dielectric region to the the central region. I want to know, what is the difference between this new method and the old method of shifting the onsite energy (like in version 08.10)? By the way, in the old method, do we just change the diangonal terms H_ii, but not the off-diagonal terms H_ij?
Thanks.