sorry ,i forgot to mention the calculation and input parameters.
I am using DFT calculation,with poisson solver setting as multigrid.I have given boundary conditions as periodic in A and B directions.My structure is p-i-n gated transistor. For doping i have replaced some Si atoms with boron atoms for p-type doping and with phosphorous atoms for n -type.
i am getting this warning repeatedly
The computed multigrid residual is greater than the required accuracy.
# Computed residual : 1.20533e33
# Required accuracy : 1.00000e-12
why am i getting such huge difference??