Author Topic: NEGF simulatrion  (Read 1934 times)

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Offline rana

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NEGF simulatrion
« on: March 12, 2016, 15:25 »
1) NEGF simulation is carried out in REAL space or Decoupled mode space?
2) Can we use ATK to simulate FETS with different cross sections.?
3) Can we define gate electrode  with more than one material(2 material in one gate electrode)?
4) Can we investigate current with non-coherent transport including scattering with optical and acoustic phonons in FETs?

Offline Jess Wellendorff

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Re: NEGF simulatrion
« Reply #1 on: March 14, 2016, 09:27 »
2) Yes, you can choose any device structure you like.
3) Yes, there is in principle no limits to the number of gate materials.
4) Yes, you can include the electron-phonon coupling: http://docs.quantumwise.com/tutorials/mobility.html

Offline rana

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Re: NEGF simulatrion
« Reply #2 on: March 14, 2016, 09:49 »
thank you sir