Dear....
I want to design a transistor like:
Ho, Po-Hsun, et al. "High-mobility InSe transistors: the role of surface oxides." ACS nano 11.7 (2017): 7362-7370.
so, I followed these steps for designing InSe:
1. Open builder > from data base > InSe
2. Select right four atoms and delete them
3. Open coordinate tools > center > apply
4. From bulk tools > lattice parameters and chose lattice type = hexagonal and keep = Cartesian
5. Go to script generator and optimize the structure and relax it
6. Send relax unit cell to builder
7. From bulk tools > repeat a=4 b=4
as you can see in fig 1 I have an InSe sheet, but, unfortunately, I can not continue and build a device. please guide me
I attached a file and figure