Author Topic: Question about how to build the "High-K" and "MTJ " model.  (Read 4224 times)

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Offline fangyongxinxi

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Dear Sir,
I have question about how to build the high-k and MJT(magnetic tunnel junction ).  I checked the 2008 and 2010 mannal carefully, still confused about the model, cause I hope to build the model by hand.
1. For the femgofe model,  we just change the  MgO lattice slightly, in order to match the Fe [001], I wonder why we do this.
2. For High-k materials in MOS structure, I wonder how to build the Ru-HfO2-Ru, structure. We choose Ru, not other metals, why ? Could you post the Ru-HfO2-Ru script ?

Offline fangyongxinxi

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Re: Question about how to build the "High-K" and "MTJ " model.
« Reply #1 on: December 17, 2010, 02:36 »
hope to get a general guide on how to build the the complex interface model. :)

Offline Anders Blom

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Re: Question about how to build the "High-K" and "MTJ " model.
« Reply #2 on: December 17, 2010, 14:07 »
Building these structures takes some careful considerations. We'll try to make some tutorial, but there are several things that must be considered in each specific case. For example - precisely as you ask about the MgO - taking care that the X/Y unit cell between the materials is commensurate; this is a fundamental requirement for any calculation of this type.

The choice of the metal can be based on a specific interest in that material, either from expectations of its particular properties, or from a technological manufacturing perspective, but sometimes it can be rather arbitrary :)
« Last Edit: December 17, 2010, 14:13 by Anders Blom »

Offline zh

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Re: Question about how to build the "High-K" and "MTJ " model.
« Reply #3 on: December 18, 2010, 04:29 »
Another important issue is the lattice-match when one builds the configuration with an interface.