Hi,
I want to use the SiGe material around 30% Ge. I replaced 3 out of 8 atoms in a 8 atom cubic Si cell. Relaxed and calculated the bandstructure. Strangly the bandgap is a direct bandgap. I did 50% Ge in 8 atom cell (4 Si atoms 4 Ge atoms) bandgap is indirect. Any comments.