Why in Quantumwise Dirichlet boundary conditions is used for the potential at the source/
drain contacts when solving the Poisson equation for a nanowire?
Does not Diriclet boundry condition limit the potential in the source/drain from following the distribution imposed by quantum mechanics[1]?
Should not one use Neumann boundary conditions for the potential at the source/drain contacts to maintain charge neutrality?
[1] A. R. Brown, A. Martinez, M. Bescond and A. Asenov, "Nanowire MOSFET variability: a 3D density gradient versus NEGF approach", Silicon Nanoelectronics Workshop, 10–11 June, Kyoto, Japan, pp. 127–128 (2007)