For a device simulation, when it is under the finite bias, I found the default boundary condition for the C direction (Left, Right) are both Dirichlet condition. To my knowledge, this condition means that 'The Hartree potential is zero at the boundary'. However, because the device is under finite bias voltage (that is, the chemical potential, or electropotential is different). Then, it seems that the Dirichlet condition can not apply to left-electrode-center-region interface and right-electrode-center-region at the same time ? Should I change the default Dirichlet condition to other condition such as Neumann?
Thank you.