Hi, I am facing an issue when dealing with NEGF surface simulations. There are many surface reconstructions for semiconductors, especially for III-V, how to determine the ghost atoms?
For example, GaN 0001 surface has a stable configuration that a Ga atom absorbed at the ideal surface. If we followed the tutorial, the outmost Ga atom should be set as ghost atom, however, this seems to be completely unphysical, as the the adatom is part of surface reconstruction.
Thank you for the response!