Author Topic: doping concentration in FET S/D  (Read 426 times)

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Offline guodudu

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doping concentration in FET S/D
« on: November 21, 2022, 02:56 »
Dear QuantumATK staff

I want to calculate the IV of FET device using IVCharacteristics object. However, the result circuit is either too large or small. I think it is because of the wrong doping concentration. So, i want to know that before calculating the IVCharacteristics object, what can i do to help me find the proper doping concentration. For example, by calculating the PDOS or bandstructure.

Any help from someone who knows the answer would be really appreciated.
Thank You.