Hello,

First of all, my system is device config of metal/amorphous semiconductor In-O (not metal/semiconductor/metal)

I tried to calculate the schottky barrier from LDOS.

I have read the tutorial and paper; ag-si interface and Nanoscale Adv., 2021, 3, 567.

And I have found that the channel length must be long enough for the electrostatic potential to converge toward E=0

Here is my question. But what if a channel of my system must have finite size like 2~3nm width?

My idea about this question is that it is impossible to simulate finite size of channel because NEGF only works for open BC system. Am I correct..? If not, how to solve it.

Thank you for your help in advance !