Hello.
I am currently simulating amorphous structure of silicon using MD, and also have some questions regarding reservoir temperature.
1. What is exactly reservoir temperature? Can it be understood as starting point?
2. When melting the silicon, is it the right procedure to set the reservoir temperature to 300 or to set reservoir temperature 3000 or more?
3. When checking MD trajectory, the some part of temperature and reservoir temperature are not aligned. For example, in the graph, reservoir temperature shows 300 to 4000K line, while the temperature line only stayed at 300K. How can I interpret this part?
Thank you.