Author Topic: This kind of device structure is Scientifically feasible for Quantum Atk?  (Read 34387 times)

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Offline techenthusiast

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Dear experts

Good morning, this kind of device structure is possible or scientifically feasible for Quantum Atk? if yes then its fine, if not then please advise. Thank you. 
« Last Edit: April 25, 2025, 11:44 by techenthusiast »

Offline Anders Blom

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But but it's not necessary to simulate all 3 tubes together, a single one will be enough. One might use 3 in a real device for increase current density, but they operate individually.

Offline zwh

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Hello, I would like to ask, RIDS current unit is uA / um, need to use the current value divided by the width of the A direction. The current obtained in the calculation of the ring gate nanotubes needs to become uA / um. Is it divided by the width of the A direction ? If not, which length should be divided by ?

Offline techenthusiast

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But but it's not necessary to simulate all 3 tubes together, a single one will be enough. One might use 3 in a real device for increase current density, but they operate individually.

So, this kind of device structure is more over feasible to operate in Quantum Atk? Like I refer previously. And according to you it will provide more current densities for ID VG. But what about the spatial region? Is it can be opted for a single spatial region for all 3 CNTS shown here? Could you please help me in this regard? by sharing a sample .py file where 3 NTs with a single spatial region throughout the device including dielectric. So that I can learn from that. Thank You.
« Last Edit: May 6, 2025, 12:56 by techenthusiast »