Author Topic: CNTFET using doped electrodes  (Read 14438 times)

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Offline F. Fuchs

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Re: CNTFET using doped electrodes
« Reply #15 on: March 6, 2025, 13:42 »
I have gone through this(With .py file)  but have not been able to replicate the provided result. It is - Undoped for both the Channel region and the source and drain Region.  I am enclosing the "N-I-N" doping profile with a similar kind of device structure. 

I probably forgot to add the part with the doping in the script I had attached.
Back in the days, the AtomicCompensationCharge approach was not available. I therefore only used the charge-Keyword in the calculator-object. The lack of any compensation charges was probably the reason for the observed behavior back in 2014.

Offline techenthusiast

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Re: CNTFET using doped electrodes
« Reply #16 on: March 6, 2025, 14:29 »
I have gone through this(With .py file)  but have not been able to replicate the provided result. It is - Undoped for both the Channel region and the source and drain Region.  I am enclosing the "N-I-N" doping profile with a similar kind of device structure. 

I probably forgot to add the part with the doping in the script I had attached.
Back in the days, the AtomicCompensationCharge approach was not available. I therefore only used the charge-Keyword in the calculator-object. The lack of any compensation charges was probably the reason for the observed behavior back in 2014.


Thank you for your kind response। I have attached my script as well for similar kind of devices structure।

Just for your kind information -I have used poison solver :Conjugate gradient

Top and button -Neuman boundary conditions
Front and back -periodic
Side by side -Dirichlet 

Slater koster model ।

Kindly advise if there any changes are required to replicate your attached results।

I have doped using -Miscellaneous section -Doping just above the spatial region of current version of the software।

Thank you once again।
You can modify my device structure or whatever feasible for you, you can revert me back।

Offline F. Fuchs

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Re: CNTFET using doped electrodes
« Reply #17 on: March 6, 2025, 14:37 »
I don't think that reproducing my old results is very useful for you. If I recall correctly, the strong shift, which you can see in the figure I attached in the other post, was mainly an artefact of the lack of compensation charges.

If I were you, I would look for another reference and model that other reference using the now available AtomicCompensationCharges.

Offline techenthusiast

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Re: CNTFET using doped electrodes
« Reply #18 on: March 6, 2025, 16:04 »
I don't think that reproducing my old results is very useful for you. If I recall correctly, the strong shift, which you can see in the figure I attached in the other post, was mainly an artefact of the lack of compensation charges.

If I were you, I would look for another reference and model that other reference using the now available AtomicCompensationCharges.

Thank you। Actually I will be obliged to you, if you can help me in this regard।  Can you check my device structure as .py file । More or less I want similar kind of IV that you have shared long back । Curve profile।  Executable Hdf5 file generation (directly) for IV analyzers from workflow point of view with current version of the software। Thank you

Ref of current version -https://www.sciencedirect.com/science/article/abs/pii/S143484112030892X
In aligned with the similar curve profile
« Last Edit: March 6, 2025, 16:10 by techenthusiast »