Hi,
after discussion with one of the authors of the paper, I have two main points:
(i) In the paper, they did the same as you did and fitted the c parameter to bulk GaAs. However, they did calculations just for GaAs slabs, not nanowires. Therefore, it is not guaranteed that the GaAs nanowire you are simulating is still a direct band gap material. I suggest that you to try to reproduce the results in the paper and see if a GaAs slab with the c parameter you fitted still has a direct band gap.
(ii) In the nanowire you are simulating, the passivating hydrogen atoms at the corners of the nanowire are in a threefold coordination. This might constitute an issue, as the fractional values for the H atoms might not be correct in this threefold coordination. I would suggest to try to calculate a different nanowire geometry in which all the H atoms have max twofold coordination.
Regards,
Daniele.