Author Topic: Webinar:New Framework for Efficient Simulations of IV Electrical Characteristics  (Read 725 times)

0 Members and 1 Guest are viewing this topic.

Offline Vaida Arcisauskaite

  • QuantumWise Staff
  • Regular ATK user
  • *****
  • Posts: 22
  • Country: dk
  • Reputation: 4
    • View Profile
Join us for a free webinar on the 4th of October featuring a demonstration of the new framework in QuantumATK, IV Characteristics Study Object, for smart and efficient modeling of device IV electrical characteristics at the atomic scale.

You can register for the webinar here.

We will first introduce the new study object framework for handling complex computational workflows. Then we will show how the IV Characteristics Study Object works as a combined framework for running multiple source-drain/gate voltage calculations, collecting, and analyzing the results. The IV Characteristics Study Object enables the calculation and analysis of the most relevant electrical characteristics of field-effect-transistor (FET) device models, including the on/off ratio, the subthreshold slope, the drain-induced barrier lowering and source-drain saturation voltage.

Presented by:  Daniele Stradi, PhD,  senior application engineer from Synopsys QuantumATK Team.

The webinar will be held twice on the 4th of October:
•   4 October, 9-9.30 AM CEST (Central European summer time) / 12.30 pm India Standard Time / 3 pm China  / 4 pm South Korea / 4 pm Japan   
•   4 October,  6-6.30 PM CEST (good time for participants from Americas)  / 12 pm (noon) US East Coast / 9 am US West Coast

Click on the drop down menu on the registration page to choose the most convenient time for you.

The duration is 30 minutes (including a Q&A session).

 During this webinar, discover efficient and smart simulations of device IV electrical characteristics with QuantumATK:

- Find out how IV Characteristics Study Object can assist you in running multiple source-drain/gate voltage calculations, collecting, and analyzing the results.  Learn from the example calculations on the model silicon-on-insulator (SOI) device and see how simulation results compare with experimental results.
-Learn how to build a device, set electrode repetitions, add gate regions, and how the new minimal electrode feature can automate the setup and repetition of the electrode.
-Learn more about the following features of the IV Characteristics Study Object:
o   Smart script restart.
o   Multilevel parallelism.
o   Seamless extension of the study with new data points.
o   Analysis module for IV characteristics.

You are welcome to ask questions throughout the webinar or at the end during the Q&A session.

You can learn more about the Study Object Concept in the QuantumATK documentation and about the IV Characteristics Study Object in the tutorial on simulating electrical characteristics for the model silicon-on-insulator (SOI) device.

You can register for the webinar here.

« Last Edit: April 24, 2020, 15:17 by Vaida Arcisauskaite »