Is it possible in ATK to have a drop of Ionic Liquid (IL) like EMI-TFSI, DEME-TFSI etc. on top of my 2D material based FET for studying transport phenomenon?
I checked the database but there are no ILs present. If this is not possible, I was thinking of creating a slab around the channel and defining dielectric constant inside the slab equal to dielectric constant of IL and then apply a very high transverse E field. This will somewhat emulate an IL gated FET. But in order to increase carrier concentration in the channel, the channel needs to be doped. I don't understand how this doping should be done.
Can this slab idea be implemented in ATK?