Author Topic: Doping in Device Simulations  (Read 73 times)

0 Members and 1 Guest are viewing this topic.

Offline Tom Jiao

  • New ATK user
  • *
  • Posts: 1
  • Country: ca
  • Reputation: 0
    • View Profile
Doping in Device Simulations
« on: April 26, 2021, 17:56 »
Hi, I am a new user to QuantumATK.  After following the IVStudyobject tutorial with the junctionless SOI structure, I changed the doping level to simulate the iv characterstics for a  nmos structure.   https://docs.quantumatk.com/tutorials/ivcharacteristics/ivcharacteristics.html

The resulten curve is attached and the subthreshold slope is a lot worse than the junctionless structure in the tutorial. I was expecting a better SS or at least similar levels. My question is that is my setup correct?  Is the central region and the electrode long enough for this doping level?

Thanks.
« Last Edit: April 26, 2021, 18:11 by Tom Jiao »

Offline Petr Khomyakov

  • QuantumWise Staff
  • Supreme ATK Wizard
  • *****
  • Posts: 1269
  • Country: dk
  • Reputation: 24
    • View Profile
Re: Doping in Device Simulations
« Reply #1 on: May 3, 2021, 12:59 »
It would instructive to see Hartree Difference Potential / PLDOS  for the device calculated using the tutorial vs. new doping level adopted in your calculation.

Note that for low-dimensional systems such as films and nanowires one should use charge per atom units when setting doping level, meaning that one should recalculated e/cm**3 for bulk system to e/atom for low dimensional. The doping assumed in your calculation seems to be significantly larger than that adopted in the tutorial.