Author Topic: Doping in Device Simulations  (Read 73 times)

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Offline Tom Jiao

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Doping in Device Simulations
« on: April 26, 2021, 17:56 »
Hi, I am a new user to QuantumATK.  After following the IVStudyobject tutorial with the junctionless SOI structure, I changed the doping level to simulate the iv characterstics for a  nmos structure.

The resulten curve is attached and the subthreshold slope is a lot worse than the junctionless structure in the tutorial. I was expecting a better SS or at least similar levels. My question is that is my setup correct?  Is the central region and the electrode long enough for this doping level?

« Last Edit: April 26, 2021, 18:11 by Tom Jiao »

Offline Petr Khomyakov

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Re: Doping in Device Simulations
« Reply #1 on: May 3, 2021, 12:59 »
It would instructive to see Hartree Difference Potential / PLDOS  for the device calculated using the tutorial vs. new doping level adopted in your calculation.

Note that for low-dimensional systems such as films and nanowires one should use charge per atom units when setting doping level, meaning that one should recalculated e/cm**3 for bulk system to e/atom for low dimensional. The doping assumed in your calculation seems to be significantly larger than that adopted in the tutorial.