Show Posts

This section allows you to view all posts made by this member. Note that you can only see posts made in areas you currently have access to.


Messages - huckelbuckel

Pages: 1 2 3 [4]
46
Hi,

I have generated a planar geometry of silicene by optmizing only the x and y directions (left out the 'z' coordinate by checking its box).The LDA/GGA DFT calculations for  lattice parameter and the bond length of Si-Si    matches with the literature i have read.See the image attached.The 'c' parameter was kept large so that inter layer interactions are minnimum and a isolated 2d geometry is obtained.Now i don't want to change the bond length and make the atoms out of plane ..for this  i need to roate one of the atoms while keeping the other fixed at origin. Although i know how rotation is performed about an axis i am confused ..which axis i should choose to roatate .. 'y' or 'xy' can you suggest this by looking at the geometry???.Also rotation in steps of 0.5 or 1 degree can be performed to give whole list of required cartesian coordinates for calculating energy at each point... i want to know is there an inbuilt rotation class or function rotate() which i can use in the code to run through the points or i have to rely on GUI only.

OR... i should drop the idea of rotating and perfom optimization only in 'z' direction  for the atom lying away from d origin.. by choosing very less force something like 0.0002 ev/A.. also do i need to keep both stress and forces low??? or only 'force' needs to kept low..leaving the stress at default This way i would get the buckling parameter in theory. :D

47
ok i will rely on my calulations and wont get confused by that... ;D

48
Hi, One small question....what is the definition of buckling parameter 'Δ'

IS (Δ = z)  OR   (Δ=2z)??  from the dig below :-\

---------------------some atoms moved to new plane 1------------------------+z
------------------------------original mean in-plane pos-------------------------------------0
---------------------some atoms moved to new plane 2------------------------ -z

49
Got the :D point!...Thank You

50
Hey Anders, Thanks a lot for this useful info..

I will try both rotation and translation methods for making it out of plane...And i will keep optimization parameters small such as 0.0025ev/A or something like that.From what i understand this optimization thing uses DFT to minimize the stress or forces b/w atoms and to make it run for all the the x,y,z coordinates the checkboxes should be unticked and the routine obviously will take more time to produce results  ;)

I have one question...  if i replace silicon atoms in graphene hexagonal crystal and dont try to change the bond length or make the atoms out of plane will this optimization(if correctly set) will take care of all the correct geometry and min energy?? or do in need to do some things manually and put in optimization for fine tuning 8) 8)  What is the correct way in general?

51
Thanks for the reply..

--Considering min energy and stability....I want to know which is the best method to make the two atoms out of plane..one is to use +and- z TRANSLATION but this changes the bond length as well!!.......the other method involves keeping one of the atoms fixed at the origin and ROTATING the other by some angle to make it out of plane thereby keeping the chosen bond length same!! :P :o

--Also i want to know which one of the following is the best basis set for silicon(in silicene) if i use extended-huckel method?
Hoffman.Silicon
Muller.Silicon
Cerda.Silicon(gw SiC)
Cerda.Silicon(gw diamond)
Cerda.Silicon(diamond)

--Although i have tried using optimizing geometry to increase stability..Pls explain briefly whats the basic meaning of max force(0.05eV/A) and maxstress(0.05eV/A3) .These values should be kept as high?? OR as low as possible? ;D

--

52
Can anyone pls help me so that i may know that..i have used the builder tool correctly and whether the translation of atoms in the image looks ok?How can we use atk to optimize the bond length/lattice constant and total min energy of this silicene crystal so that i can confirm in theory.. the si-si bond lengths and buckling corresponds to stable system with min enrgy? ??? ???

53
General Questions and Answers / Silicene bandstructure calculation
« on: December 22, 2011, 11:48 »
Hello,
1)I am new to ATK VNL and i am am trying to calculate the bandstructure of silicene.Read some articles on the same and found that Si-Si bond distance is approx 2.12 to 2.21A in a honeycomb puckered structure with lattice of 3.860A.To draw the geometry I first selected the graphene crystal from database and then replaced the C atoms with Si atoms.Now since we know that Si atoms in silicene are not in same plane i translated the two Si atoms in Z direction by + and -0.8A to get the out of plane structure thereby leading to a bond distance of about 2.2A between the two translated atoms.I did ATK dft calculations with optimized geometry and got the bandstructure showing some sort of dirac cone arrangement.I have attached the images for geometry arrangements of graphene and translation of atoms leading to "silicene crystal" and also the final bandstructure of silicene.Can somebody please look at the crystal builder image of silicene and advice me if iam doing it the correct way or i need to do somethin else?? ie have i made the geometry correctly using builder???

2)someone..Advice me on how to use and interpret the "total energy" calculation as it gives something negative -355.46ev ???

If i understand the geometry of silicene later i will move on and try to play with silicene nanoribbons and may be devices   

Pages: 1 2 3 [4]