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General Questions and Answers / Is it possible to simulate MoS2 FET (2um channel length) in ATK?
« on: May 13, 2020, 01:46 »
Hello,
I am quite new to ATK.
I am wondering if I have a FET device (2um channel length, and 10 um channel width) made of a few layers (10 nm) MoS2 thick exfoliated layer, contacted at source and drain with gold contact, and the gate is applied through a global gate through the substrate (standard 300 nm SiO2/highly doped Si). Is such a device something I can simulate in ATK? I am mainly interested in the electrical output of the device, Ids Vs. Vds, and so on.
Please if there are examples, I would appreciate sharing them with me.
Thanks,
I am quite new to ATK.
I am wondering if I have a FET device (2um channel length, and 10 um channel width) made of a few layers (10 nm) MoS2 thick exfoliated layer, contacted at source and drain with gold contact, and the gate is applied through a global gate through the substrate (standard 300 nm SiO2/highly doped Si). Is such a device something I can simulate in ATK? I am mainly interested in the electrical output of the device, Ids Vs. Vds, and so on.
Please if there are examples, I would appreciate sharing them with me.
Thanks,