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« on: March 28, 2016, 15:06 »
In the following paper : K. Stokbro et. al., "Atomistic simulation of a III-V p-i-n junction: Comparison of density functional and tight-binding approaches", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, 10.1109/SISPAD.2013.6650654, the material and device properties are calculated by both DFT and SE methods, but the LDOS has been calculated by DFT only. How the LDOS of the same device structure can be calculated by Semi empirical methods specially by Slater Koster method?