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General Questions and Answers / Re: A question about device configuratons
« on: August 23, 2016, 04:20 »Your device configuration represents a thin piece of intrinsic semiconductor sandwiched between two electrodes that both contain some concentration of impurity atoms. The length of the doped electrodes is the electrode length + electrode extension length. Only the scattering region contains intrinsic semiconductor.Thanks for your advice !
Please note that there is another way to introduce doping in the VNL Builder: http://docs.quantumwise.com/tutorials/nisi2-si/nisi2-si.html#dope-the-device