Author Topic: Self-Consistent and Linear I-V characteristics  (Read 3349 times)

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Offline abbas

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Self-Consistent and Linear I-V characteristics
« on: March 31, 2014, 23:16 »
Dear Sir/Madam,

I am trying to get I-V cure of a monolayer MoS2 and I tried both Self-Consistent and linear methods. In Self-Consistent I have calculated transmission spectrum for every single bias point and consequently using that spectrum to calculate the current. In linear approximation I have calculated transmission spectrum in zero bias and insert the electrode voltages when I am calculating current.
It gave me two very different I-V curves.
I am wondering that transmission spectrum can be so sensitive to applied bias since I am applying a bias window from -0.8V to 0.8V ?

Offline Bobby

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Re: Self-Consistent and Linear I-V characteristics
« Reply #1 on: April 1, 2014, 01:42 »
I am also willing to know the answer. And by the way, I am adding another question and hopefully I could find the answer here:

In some device configuration with a top (or bottom) gate, we know the gate voltage will shift the transmission spectrum (say for a device with energy gap, it shifts the energy gap window) to left (or right) depends on the polarity of the gate potential.

However, if it possible for a bias voltage applied on the electrodes that shifts the transmission spectrum in the same manner?

It looks to me the answer is no. Is it correct?

Thanks


Offline abbas

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Re: Self-Consistent and Linear I-V characteristics
« Reply #2 on: April 1, 2014, 16:36 »
applying voltage on electrodes not only shift the fermi level of right and left electrodes but also it changes the transmission spectrum rather substantially.
As far as what my results show, transmission spectrum strongly depends on teh applied bias on electrodes.

Offline Anders Blom

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Re: Self-Consistent and Linear I-V characteristics
« Reply #3 on: April 2, 2014, 23:40 »
Yes, it is the general observation of many authors that the transmission spectrum can be strongly bias-dependent.