Hi all:
i have a FET system similar to figure 1. so i want to calculate the carrier mobility, i have seen a formular(see figure 2) in a eperiments in nano letter 2013 13 1983-1990.
but i am wondering how to define the channel width, because in our theortical work, the sheet of WSe2 is periodic in the x-y plane, so there is infinite wide,
therefore, dear ATK develper, would you help me to how to calculate the FET carrier mobility, because it is rather key parameters in device character.