creating a for loop for Id-Vg characteristics-URGENT

[msg]

in an example given (li-h2-l2-iv  curve and voltage drop) a for loop was created,but it was observed that in t he structure a gate region wasn't designed,yet the gate voltage varied over certain value....in the gnreft on which i am working on,i created a gate region with a dielectric constant of 4...how can i incorporate this information in the for loop,what modifications should be made in the code to include this information or is it fine to use the code given without considering the gate parameters(dielectric constant and so on),as is seen the the tutorial(by just varying the gate voltage,AND NOT INCLUDING ANY DIELECTRIC PARAMETERS)...please do reply.....

[Anders Blom]

This should be helpful: http://quantumwise.com/documents/tutorials/latest/GrapheneDevice/index.html/chap.further.html#chap.further.sect1.both (and other chapters in the same tutorial).